SI7102DN

The SI7102DN is designed as one kind of dual N-channel 12-V (D-S) MOSFET device that can be used in wide range of applications such as (1)secondary synchronous rectification; (2)point-of-load; (3)load switch. And this device has some points of features:(1)halogen-free according to IEC 61249-2-21 available; (2)TrenchFET-power MOSFET; (3)low thermal resistance powerPAK-package with small size and low 1.07 mm profile; (4)100 % Rg tested.

The absolute maximum ratings of the SI7102DN can be summarized as:(1)Drain-Source Voltage: 12 V;(2)Gate-Source Voltage: +/- 8 V;(3)Pulsed Drain Current: 60 A;(4)Maximum Power Dissipation: 2.4 to 52 W;(5)Continuous Drain Current (TJ = 150 °C): 35 A;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of the SI7102DN can be summarized as:(1)Drain-Source Breakdown Voltage: 12 V;(2)VDS Temperature Coefficient: 12 mV/°C;(3)VGS(th) Temperature Coefficient: -3.1 mV/°C;(4)Gate-Source Threshold Voltage: 0.40 to 1.0 V;(5)Gate-Source Leakage: ±100 nA;(6)On-State Drain Current: 30 A;(7)Forward Transconductance: 110 S. If you want to know more information about the SI7102DN, please download the datasheet in www.seekic.com or www.chinaicmart.com .