Features: · TrenchFET® Power MOSFET·New Low Thermal Resistance· PowerPAK® 1212-8 Package withLow 1.07-mm Profile· 100% Rg TestedApplication· Primary Side Switch· Synchronous RectificationSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 60 V ...
Si7120DN: Features: · TrenchFET® Power MOSFET·New Low Thermal Resistance· PowerPAK® 1212-8 Package withLow 1.07-mm Profile· 100% Rg TestedApplication· Primary Side Switch· Synchronous RectificationSpe...
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Parameter | Symbol | 10 secs | Steady State | Unit | |
Drain-Source Voltage | VDS | 60 | V | ||
Gate-Source Voltage | VGS | ±20 | |||
Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 10 | 6.3 | A |
TA = 70 | 8.0 | 5.1 | |||
Pulsed Drain Current | IDM | 40 | |||
Continuous Source Current (Diode Conduction)a | IS | 3.2 | 1.3 | ||
Single Avalanche Current | L = 0.1 mH | IAS | 22 | ||
Single Avalanche Energy | EAS | 24 | mJ | ||
Maximum Power Dissipationa | TA = 25 | PD | 3.8 | 1.5 | W |
TA = 70 | 2.4 | 1.0 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W |