Si7136DP_RC

Description

The parametric values in the R-C thermal model Si7136DP_RC have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.

R-C values for the electrical circuit Si7136DP_RC in the Foster/Tank and Cauer/Filter configurations are included.

Note:
For a detailed explanation of implementing these values in P-SPICE Si7136DP_RC, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.