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SI6923DQ, SI6923DQT1, SI6923DQ-T1

Table of contents:
Info of SI6923DQ
Info of SI6923DQT1
Info of SI6923DQ-T1

SI6923DQ, SI6923DQT1, SI6923DQ-T1 Selling Leads, Datasheet

MFG:Fairchild Package Cooled:N/A D/C:09+

SI6923DQ, SI6923DQT1, SI6923DQ-T1 Picture

SI6923DQ, SI6923DQT1, SI6923DQ-T1 Datasheet download

Five Points

Part Number: SI6923DQ

MFG: Fairchild

Package Cooled: N/A

D/C: 09+

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SI6923DQ General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications.

SI6923DQ Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Load Current Continuous (Note 1) - Pulsed	-3.5	A
I_D	Load Current Continuous (Note 1) - Pulsed	-30	A
P_D	MOSFET Power Dissipation (minimum pad) (Note 1) Schottky Power Dissipation (minimum pad) (Note 1)	1.2	W
P_D		1.0	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150

SI6923DQ Features

• 3.5 A, 20 V. R_DS(ON) = 0.045 @ V_GS = 4.5 V
R_DS(ON) = 0.075 @ V_GS = 2.5 V
• VF < 0.55 V @ 1 A
• High performance trench technology for extremely low R_DS(ON)
• Low profile TSSOP-8 package

SI6923DQ Typical Application

• DC/DC conversion

SI6923DQ Connection Diagram

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