MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:2006
SGR20N40L, SGR2N60UFD, SGR2N60UFDTF Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 2006
Description: IGBT W/DIODE 600V 1.2A DPAK
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PDF/DataSheet Download
Datasheet: SGR20N40L
File Size: 152821 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGR2N60UFD
File Size: 551469 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGR117A
File Size: 49780 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity.
These devices are very suitable for strobe applications
| Symbol | Description | SGP23N60RUFD | Units |
| VCES | Collector-Emitter Voltage | 400 | V |
| VGES | Gate-Emitter Voltage | ±6 | V |
| I CM(1) | Pulsed Collector Current | 150 | A |
| PC | Maximum Power Dissipation @ TC = 25 | 45 | W |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
| Symbol | Description | SGH20N120RUFD | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current @ TC = 25 | 2.4 | A |
| Collector Current @ TC = 100 | 1.2 | A | |
| I CM(1) | Pulsed Collector Current | 10 | A |
| IF | Diode Continuous Forward Current @ TC = 100 | 1.5 | A |
| IFM | Diode Maximum Forward Current | 12 | A |
| PD | Maximum Power Dissipation @ TC = 25 | 25 | W |
| Maximum Power Dissipation @ TC = 100 | 10 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | SGR2N60UFDTF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 2.4A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 1.2A |
| Power - Max | 25W |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SGR2N60UFDTF SGR2N60UFDTF |
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