Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 1.2A• High input impedanceApplicationAC & DC motor controls, general purpose inverters, robotics, and servo controls.Specifications Symbol Description SGH20N120RUFD Units VCES Coll...
SGR2N60UF: Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 1.2A• High input impedanceApplicationAC & DC motor controls, general purpose inverters, robo...
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Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 1....
Symbol | Description | SGH20N120RUFD | Units |
VCES | Collector-Emitter Voltage | 600 | V |
VCES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC = 25 | 2.4 | A |
Collector Current @ TC = 100 | 1.2 | A | |
I CM(1) | Pulsed Collector Current | 10 | A |
PD | Maximum Power Dissipation @ TC = 25 | 25 | W |
Maximum Power Dissipation @ TC = 100 | 10 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.