MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:QFN-20 D/C:6+
SGR117L, SGR15N40L, SGR15N40LTF Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: QFN-20
D/C: 6+
Description: IGBT TRENCH 400V 130A DPAK
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PDF/DataSheet Download
Datasheet: SGR117A
File Size: 49780 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGR15N40L
File Size: 173367 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGR117A
File Size: 49780 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity.
Thesedevices are very suitable for strobe applications
| Symbol | Description | SGP23N60RUFD | Units |
| VCES | Collector-Emitter Voltage | 400 | V |
| VGES | Gate-Emitter Voltage | ±6 | V |
| I CM(1) | Pulsed Collector Current | 130 | A |
| PC | Maximum Power Dissipation @ TC = 25 | 45 | W |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | SGR15N40LTF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | 130A |
| Vce(on) (Max) @ Vge, Ic | - |
| Power - Max | - |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SGR15N40LTF SGR15N40LTF |
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