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SGR2N60UFD

Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 1.2A• High input impedance• CO-PAK, IGBT with FRD : trr = 45ns (typ.)ApplicationAC & DC motor controls, general purpose inverters, robotics, and servo controls.Specifications Symbol...

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SGR2N60UFD: Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 1.2A• High input impedance• CO-PAK, IGBT with FRD : trr = 45ns (typ.)ApplicationAC & D...

SGR2N60UFD Data Sheet

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Part Number:
SGR2N60UFD
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High speed switching
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 1.2A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 45ns (typ.)


Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.


Specifications

Symbol Description SGH20N120RUFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ±20 V
IC Collector Current @ TC = 25 2.4 A
Collector Current @ TC = 100 1.2 A
I CM(1) Pulsed Collector Current 10 A
IF Diode Continuous Forward Current @ TC = 100 1.5 A
IFM Diode Maximum Forward Current 12 A
PD Maximum Power Dissipation @ TC = 25 25 W
Maximum Power Dissipation @ TC = 100 10 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds		 300



Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.




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