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Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switchinglosses as well as short circuit ruggedness.
The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
SGH30N60RUFD Maximum Ratings
Symbol
Description
SGH20N120RUFD
Units
VCES
Collector-Emitter Voltage
600
V
VCES
Gate-Emitter Voltage
± 20
V
IC
Collector Current @ TC = 25
48
A
Collector Current @ TC = 100
30
A
I CM(1)
Pulsed Collector Current
90
A
IF
Diode Continuous Forward Current @ TC = 100
25
A
IFM
Diode Maximum Forward Current
220
A
TSC
Short Circuit Withstand Time @ TC = 100
10
s
PD
Maximum Power Dissipation @ TC = 25
235
W
Maximum Power Dissipation @ TC = 100
90
W
TJ
Operating Junction Temperature
-55 to +150
Tstg
Storage Temperature Range
-55 to +150
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
300
SGH30N60RUFD Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A • High input impedance • CO-PAK, IGBT with FRD : trr = 50ns (typ.)
SGH30N60RUFD Typical Application
AC & DC motor controls, general purpose inverters, robotics, and servo controls.