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Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
SGH10N60RUFD Maximum Ratings
Symbol
Description
SGH10N120RUFD
Units
VCES
Collector-Emitter Voltage
600
V
VCES
Gate-Emitter Voltage
± 25
V
IC
Collector Current @ TC = 25°C
16
A
ICM (1)
Collector Current @ TC = 100°C
10
A
IF
Pulsed Collector Current
30
VGS
Maximum Power Dissipation @ TC = 25°C
75
A
TSTG
Maximum Power Dissipation @ TC = 100°C
30
W
TJ
Operating Junction Temperature
-55 to +150
W
TSTG
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds
300
°C
SGH10N60RUFD Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A • High input impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.)
SGH10N60RUFD Typical Application
AC & DC motor controls, general purpose inverters, robotics, and servo controls.