SGH20N120RUF, SGH20N120RUFD, SGH20N60RUF Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:TO
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SGH20N120RUF, SGH20N120RUFD, SGH20N60RUF Datasheet download
Part Number: SGH20N120RUF
MFG: Fairchild
Package Cooled: N/A
D/C: TO
MFG:Fairchild Package Cooled:N/A D/C:TO
SGH20N120RUF, SGH20N120RUFD, SGH20N60RUF Datasheet download
MFG: Fairchild
Package Cooled: N/A
D/C: TO
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PDF/DataSheet Download
Datasheet: SGH20N120RUF
File Size: 517658 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGH20N120RUFD
File Size: 574474 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGH20N60RUF
File Size: 554372 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) RUF series provides low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Symbol |
Description |
SGH10N120RUFD |
Units |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VCES |
Gate-Emitter Voltage |
± 25 |
V |
IC |
Collector Current @ TC = 25°C |
32 |
A |
ICM (1) |
Collector Current @ TC = 100°C |
20 |
A |
IF |
Pulsed Collector Current |
60 | |
VGS |
Maximum Power Dissipation @ TC = 25°C |
230 |
A |
TSTG |
Maximum Power Dissipation @ TC = 100°C
|
92 |
W |
TJ |
Operating Junction Temperature |
-55 to +150 |
W |
TSTG |
Storage Temperature Range |
-55 to +150 |
°C |
TL |
Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness.
The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Symbol | Description | SGH20N120RUFD | Units |
VCES | Collector-Emitter Voltage | 1200 | V |
VCES | Gate-Emitter Voltage | ± 25 | V |
IC | Collector Current @ TC = 25 | 32 | A |
Collector Current @ TC = 100 | 20 | A | |
I CM(1) | Pulsed Collector Current | 60 | A |
IF | Diode Continuous Forward Current @ TC = 100 | 20 | A |
IFM | Diode Maximum Forward Current | 120 | A |
TSC | Short Circuit Withstand Time @ TC = 100 | 10 | s |
PD | Maximum Power Dissipation @ TC = 25 | 230 | W |
Maximum Power Dissipation @ TC = 100 | 92 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Symbol | Description | SGH20N120RUFD | Units |
VCES | Collector-Emitter Voltage | 600 | V |
VCES | Gate-Emitter Voltage | ± 20 | V |
IC | Collector Current @ TC = 25 | 32 | A |
Collector Current @ TC = 100 | 20 | A | |
I CM(1) | Pulsed Collector Current | 60 | A |
TSC | Short Circuit Withstand Time @ TC = 100 | 10 | s |
PD | Maximum Power Dissipation @ TC = 25 | 195 | W |
Maximum Power Dissipation @ TC = 100 | 75 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |