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Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
SGH23N60UFD Maximum Ratings
Symbol
Description
SGH20N120RUFD
Units
VCES
Collector-Emitter Voltage
600
V
VCES
Gate-Emitter Voltage
± 20
V
IC
Collector Current @ TC = 25
23
A
Collector Current @ TC = 100
12
A
I CM(1)
Pulsed Collector Current
92
A
IF
Diode Continuous Forward Current @ TC = 100
12
A
IFM
Diode Maximum Forward Current
92
A
PD
Maximum Power Dissipation @ TC = 25
100
W
Maximum Power Dissipation @ TC = 100
40
W
TJ
Operating Junction Temperature
-55 to +150
Tstg
Storage Temperature Range
-55 to +150
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
300
SGH23N60UFD Features
• High Speed Switching • Low Saturation Voltage : V CE(sat) = 2.1 V @ IC = 12A • High Input Impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.)
SGH23N60UFD Typical Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls