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SGH10N120RUF, SGH10N120RUFD, SGH10N60RUF

Table of contents:
Info of SGH10N120RUF
Info of SGH10N120RUFD
Info of SGH10N60RUF

SGH10N120RUF, SGH10N120RUFD, SGH10N60RUF Selling Leads, Datasheet

MFG:FAIRCHILD Package Cooled:TO-247 D/C:TO

SGH10N120RUF, SGH10N120RUFD, SGH10N60RUF Picture

SGH10N120RUF, SGH10N120RUFD, SGH10N60RUF Datasheet download

Five Points

Part Number: SGH10N120RUF

MFG: FAIRCHILD

Package Cooled: TO-247

D/C: TO

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SGH10N120RUF General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

SGH10N120RUF Maximum Ratings

Symbol	Characteristics	Rating	Units
VCES	Collector-Emitter Voltage	1200	V
VCES	Gate-Emitter Voltage	± 25	V
IC	Collector Current @ TC = 25°C	16	A
ICM (1)	Collector Current @ TC = 100°C	10	A
IF	Pulsed Collector Current	30	A
V_GS	Maximum Power Dissipation @ TC = 25°C	125	A
T_STG	Maximum Power Dissipation @ TC = 100°C	50	W
TJ	Operating Junction Temperature	-55 to +150	W
T_STG	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds	300	°C

SGH10N120RUF Features

• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 10A
• High input impedance

SGH10N120RUF Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

SGH10N120RUFD General Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

SGH10N120RUFD Maximum Ratings

Symbol	Description	SGH10N120RUFD	Units
VCES	Collector-Emitter Voltage	1200	V
VCES	Gate-Emitter Voltage	± 25	V
IC	Collector Current @ TC = 25°C	16	A
ICM (1)	Collector Current @ TC = 100°C	10	A
IF	Pulsed Collector Current	30	A
V_GS	Maximum Power Dissipation @ TC = 25°C	125	A
T_STG	Maximum Power Dissipation @ TC = 100°C	50	W
TJ	Operating Junction Temperature	-55 to +150	W
T_STG	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds	300	°C

SGH10N120RUFD Features

• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 10A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 65ns (typ.)

SGH10N120RUFD Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

SGH10N60RUF General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverterswhere short circuit ruggedness is a required feature.

SGH10N60RUF Maximum Ratings

Symbol	Description	SGH10N120RUFD	Units
VCES	Collector-Emitter Voltage	600	V
VCES	Gate-Emitter Voltage	± 25	V
IC	Collector Current @ TC = 25°C	16	A
ICM (1)	Collector Current @ TC = 100°C	10	A
IF	Pulsed Collector Current	30	A
V_GS	Maximum Power Dissipation @ TC = 25°C	75	A
T_STG	Maximum Power Dissipation @ TC = 100°C	30	W
TJ	Operating Junction Temperature	-55 to +150	W
T_STG	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds	300	°C

SGH10N60RUF Features

• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A
• High input impedance

SGH10N60RUF Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

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