RMWT11001, RMWW12001, RMX-06 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
RMWT11001, RMWW12001, RMX-06 Datasheet download
Part Number: RMWT11001
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
MFG:Fairchild Package Cooled:N/A D/C:09+
RMWT11001, RMWW12001, RMX-06 Datasheet download
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
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Datasheet: RMWT11001
File Size: 128817 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: RMWW12001
File Size: 150768 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
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The RMWT11001 is an 11 to 33 GHz Tripler designed for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF Components amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWT11001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications.
Symbol | Parameter | Ratings | Units |
PIN | RF Input Power (from 50source) |
+22 | dBm |
TC | Operating Baseplate Temperature | -30 to +85 | |
Tstg | Storage Temperature Range | -55 to +125 |
The RMWW12001 is a 12 to 24 GHz Doubler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWW12001 utilizes Raytheon's 0.25 µm power PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications.
Parameter | Symbol | Value | Units |
RF Input Power (from 50 ? source) | PIN | +22 | dBm |
Operating Baseplate Temperature | TC | -30 to +85 | |
Storage Temperature Range | Tstg | -55 to +125 |
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment or PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mil between the chip and the substrate material.