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RMWB12001

Features: • 4 mil Substrate• Small-signal Gain 25dB (typ.)• 3dB compressed Pout 21dBm (typ.)• Voltage Detector Included to Monitor Pout• Chip size 2.2mm x 1.7mmSpecifications Symbol Parameter Ratings Units Vd Positive DC Voltage (+4V Typical) +6 V Vg ...

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SeekIC No. : 004478229 Detail

RMWB12001: Features: • 4 mil Substrate• Small-signal Gain 25dB (typ.)• 3dB compressed Pout 21dBm (typ.)• Voltage Detector Included to Monitor Pout• Chip size 2.2mm x 1.7mmSpecific...

RMWB12001 Data Sheet

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Part Number:
RMWB12001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Description



Features:

• 4 mil Substrate
• Small-signal Gain 25dB (typ.)
• 3dB compressed Pout 21dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.2mm x 1.7mm


Specifications

Symbol Parameter Ratings Units
Vd Positive DC Voltage (+4V Typical) +6 V
Vg Negative DC Voltage -2 V
Vdg Simultaneous (VdVg) 8 V
ID

 Positive DC Current
 207 mA
PIN RF Input Power (from 50 source)
 +8 dBm
TC
 Operating Baseplate Temperature -30 to +85
TSTG
 Storage Temperature Range -55 to +125
RJC Thermal Resistance (Channel to Backside) 120 /W



Description

The RMWB12001 is a 3-stage GaAs MMIC amplifier designed as an 8.5 to 12 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWB12001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications.




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