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RMWB11001

Features: • 4 mil substrate• Small-signal gain 21dB (typ.)• Saturated Power Out 19dBm (typ.)• Voltage Detector Included to Monitor Pout• Chip size 2.0mm x 1.3mmSpecifications Symbol Parameter Ratings Units Vd Positive DC Voltage (+4V Typical) +6 V Vg ...

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SeekIC No. : 004478228 Detail

RMWB11001: Features: • 4 mil substrate• Small-signal gain 21dB (typ.)• Saturated Power Out 19dBm (typ.)• Voltage Detector Included to Monitor Pout• Chip size 2.0mm x 1.3mmSpecific...

RMWB11001 Data Sheet

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Part Number:
RMWB11001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 4 mil substrate
• Small-signal gain 21dB (typ.)
• Saturated Power Out 19dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.0mm x 1.3mm


Specifications

Symbol Parameter Ratings Units
Vd Positive DC Voltage (+4V Typical) +6 V
Vg Negative DC Voltage -2 V
Vdg Simultaneous (VdVg) 8 V
Id

 Positive DC Current
 104 mA
PIN RF Input Power (from 50 source)
 +8 dBm
TC
 Operating Baseplate Temperature -30 to +85
TSTG
 Storage Temperature Range -55 to +125
RJC Thermal Resistance (Channel to Backside) 180 /W



Description

The RMWB11001 is a 2-stage GaAs MMIC amplifier designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWB11001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications.




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