RMWP26001, RMWP38001, RMWT04001 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
RMWP26001, RMWP38001, RMWT04001 Datasheet download
Part Number: RMWP26001
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
RMWP26001, RMWP38001, RMWT04001
- Table of contents:
Info of RMWP26001
Info of RMWP38001
Info of RMWT04001
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About RMWP26001
PDF/DataSheet Download
Datasheet: RMWP26001
File Size: 394769 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About RMWB04001
PDF/DataSheet Download
Datasheet: RMWB04001
File Size: 114751 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About RMWT04001
PDF/DataSheet Download
Datasheet: RMWT04001
File Size: 151879 KB
Manufacturer:
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RMWP26001 General Description
The RMWP26001 is a 4-stage GaAs MMIC amplifier designed as a 24 to 26.5 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 26 GHz transmit/receive chipset.
The RMWP26001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
RMWP26001 Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| Vd | Positive DC Voltage (+4V Typical) | +6 | V |
| Vg | Negative DC Voltage | -2 | V |
| Vdg | Simultaneous (VdVg) | 8 | V |
| ID |
Positive DC Current |
531 | mA |
| PIN | RF Input Power (from 50 source) |
+8 | dBm |
| TC |
Operating Baseplate Temperature | -30 to +85 | |
| TSTG |
Storage Temperature Range | -55 to +125 | |
| RJC | Thermal Resistance (Channel to Backside) | 41.5 | /W |
RMWP26001 Features
• 4mil substrate
• Small-signal gain 23dB (typ.)
• 1dB compressed Pout 24dBm (typ.)
• Chip size 2.85mm x 1.2mm
• Small-signal gain 23dB (typ.)
• 1dB compressed Pout 24dBm (typ.)
• Chip size 2.85mm x 1.2mm
RMWT04001 General Description
The RMWT04001 is a 4 to 12 GHz Tripler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23, 26 and 38 GHz transmit/receive chipset. The RMWT04001 utilizes Raytheon's 0.25 µm power PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications.
RMWT04001 Maximum Ratings
| Parameter | Symbol | Value | Units |
| RF Input Power (from 50 ? source) | PIN | +25 | dBm |
| Operating Baseplate Temperature | TC | -30 to +85 | |
| Storage Temperature Range | Tstg | -55 to +125 |
RMWT04001 Features
· 4 mil substrate
· Conversion loss 14 dB (typ.)
· No DC bias required
· Chip size 1.8 mm x 1.05 mm
· Conversion loss 14 dB (typ.)
· No DC bias required
· Chip size 1.8 mm x 1.05 mm
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