Features: • 4 mil Substrate• Small-signal Gain 24dB (typ.)• Saturated Power Out 19dBm (typ.)• Voltage Detector Included to Monitor Pout• Chip size 3.2mm x 1.2mmSpecifications Symbol Parameter Ratings Units Vd Positive DC Voltage (+4V Typical) +6 V Vg ...
RMWB33001: Features: • 4 mil Substrate• Small-signal Gain 24dB (typ.)• Saturated Power Out 19dBm (typ.)• Voltage Detector Included to Monitor Pout• Chip size 3.2mm x 1.2mmSpecific...
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Symbol | Parameter | Ratings | Units |
Vd | Positive DC Voltage (+4V Typical) | +6 | V |
Vg | Negative DC Voltage | -2 | V |
Vdg | Simultaneous (VdVg) | 8 | V |
ID |
Positive DC Current |
173 | mA |
PIN | RF Input Power (from 50 source) |
+8 | dBm |
TC |
Operating Baseplate Temperature | -30 to +85 | |
TSTG |
Storage Temperature Range | -55 to +125 | |
RJC | Thermal Resistance (Channel to Backside) | 130 | /W |
The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWB33001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications.