RFM10N15, RFM10N45, RFM10N50 Selling Leads, Datasheet
MFG:MOT Package Cooled:01+ D/C:01+
RFM10N15, RFM10N45, RFM10N50 Datasheet download
Part Number: RFM10N15
MFG: MOT
Package Cooled: 01+
D/C: 01+
MFG:MOT Package Cooled:01+ D/C:01+
RFM10N15, RFM10N45, RFM10N50 Datasheet download
MFG: MOT
Package Cooled: 01+
D/C: 01+
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PDF/DataSheet Download
Datasheet: RFM10N15
File Size: 225812 KB
Manufacturer: GESS [GE Solid State]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFM10N45
File Size: 32072 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFM10N50
File Size: 32072 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM10N45 | RFM10N50 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 450 | 500 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 500 | V |
RMS Continuous ID | 10 | 10 | A |
Pulsed Drain Current (Note 3) IDM | 20 | 20 | V |
Maximum Power Dissipation PD | ±20 | ±20 | V |
Maximum Power Dissipation PD | 150 | 150 | W |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
Linear Derating Factor | 1.2 | 1.2 | W/oC |
Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM10N45 | RFM10N50 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 450 | 500 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 500 | V |
RMS Continuous ID | 10 | 10 | A |
Pulsed Drain Current (Note 3) IDM | 20 | 20 | V |
Maximum Power Dissipation PD | ±20 | ±20 | V |
Maximum Power Dissipation PD | 150 | 150 | W |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
Linear Derating Factor | 1.2 | 1.2 | W/oC |
Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |