RFM15N05

The features of RFM15N05 are: (1)design optimized for 5V gate drive; (2)can be directly from Q-MOS, N-MOS, TTL circuits; (3)compatible with automotive drive requirements; (4)SOA is power-dissipation limited; (5)nanosecond switching speeds; (6)linear transfer charaxteristics; (7)high input impedance; (8)majority carrier device.

The following is about the absolute maximum ratings of RFM15N05: (1)drain-source voltage: 50V; (2)drain-gate voltage, Rgs=1M: 50V; (3)gate-source voltage: ±10V; (4)drain current, RMS continuous: 15A; (5)power dissipation @ Tc=25: 75W, derate abrove Tc=25: 0.6W/; (6)operating and storage temperature: -55 to +150.

The electrical characteristics of the RFM15N05 are: (1)drain-source breakdown voltage: 50V min at ID=1mA, VGS=0; (2)gate thresholad voltage: 1V min and 2V max at VDS=VGS, ID=1mA; (3)zero gate voltage drain: 1A max at VDS=145V; (4)gate-source leakage current: 100nA max at VGS=±10V, VDS=0; (5)static drain-source on resistance: 0.14 max at ID=7.5A, VGS=5V; (6)input capacitance: 900pF max at VDS=25V, VGS=0V, f=1MHz; (7)output capacitance: 450pF max at VDS=25V, VGS=0V, f=1MHz.