Features: • 10A, 450V and 500V• rDS(ON) = 0.600WSpecifications RFM10N45 RFM10N50 UNITS Drain to Source Voltage (Note 1) VDSS 450 500 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 500 V RMS Continuous ID 10 10 A Pulsed Drain Current (Note 3) IDM 20 ...
RFM10N45: Features: • 10A, 450V and 500V• rDS(ON) = 0.600WSpecifications RFM10N45 RFM10N50 UNITS Drain to Source Voltage (Note 1) VDSS 450 500 V Drain to Gate Voltage (RGS = 1MW)...
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RFM10N45 | RFM10N50 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 450 | 500 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 500 | V |
RMS Continuous ID | 10 | 10 | A |
Pulsed Drain Current (Note 3) IDM | 20 | 20 | V |
Maximum Power Dissipation PD | ±20 | ±20 | V |
Maximum Power Dissipation PD | 150 | 150 | W |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
Linear Derating Factor | 1.2 | 1.2 | W/oC |
Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
These are N-Channel enhancement mode silicon gate power field effect transistors RFM10N45 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFM10N45 can be operated directly from integrated circuits.