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RFM10N45

Features: • 10A, 450V and 500V• rDS(ON) = 0.600WSpecifications RFM10N45 RFM10N50 UNITS Drain to Source Voltage (Note 1) VDSS 450 500 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 500 V RMS Continuous ID 10 10 A Pulsed Drain Current (Note 3) IDM 20 ...

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SeekIC No. : 004476576 Detail

RFM10N45: Features: • 10A, 450V and 500V• rDS(ON) = 0.600WSpecifications RFM10N45 RFM10N50 UNITS Drain to Source Voltage (Note 1) VDSS 450 500 V Drain to Gate Voltage (RGS = 1MW)...

RFM10N45 Data Sheet

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Part Number:
RFM10N45
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 10A, 450V and 500V
• rDS(ON) = 0.600W


Specifications

  RFM10N45 RFM10N50 UNITS
Drain to Source Voltage (Note 1) VDSS 450 500 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 500 V
RMS Continuous ID 10 10 A
Pulsed Drain Current (Note 3) IDM 20 20 V
Maximum Power Dissipation PD ±20 ±20 V
Maximum Power Dissipation PD 150 150 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 1.2 1.2 W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFM10N45 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFM10N45 can be operated directly from integrated circuits.




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