Features: • 12A, 350V and 400V• rDS(ON) = 0.500WSpecifications RFM12N35 RFP6N40 UNITS Drain to Source Voltage (Note 1) VDSS 350 400 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 350 400 V RMS Continuous ID 12 12 A Pulsed Drain Current (Note 3) IDM 24 ...
RFM12N40: Features: • 12A, 350V and 400V• rDS(ON) = 0.500WSpecifications RFM12N35 RFP6N40 UNITS Drain to Source Voltage (Note 1) VDSS 350 400 V Drain to Gate Voltage (RGS = 1MW) ...
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RFM12N35 | RFP6N40 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 350 | 400 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 350 | 400 | V |
RMS Continuous ID | 12 | 12 | A |
Pulsed Drain Current (Note 3) IDM | 24 | 24 | V |
Maximum Power Dissipation PD | ±20 | ±20 | V |
Maximum Power Dissipation PD | 150 | 150 | W |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
Linear Derating Factor | 1.2 | 1.2 | W/oC |
Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
These are N-Channel enhancement mode silicon gate power field effect transistors RFM12N40 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFM12N40 can be operated directly from integrated circuits.