RFM15N12

DescriptionThe features of RFM15N12 are: (1)SOA is power-dissipation limited; (2)nanosecond switching speeds; (3)linear transfer charaxteristics; (4)high input impedance; (5)majority carrier device; (6)high-current, low-inductance package. The following is about the absolute maximum ratings of RF...

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SeekIC No. : 004476586 Detail

RFM15N12: DescriptionThe features of RFM15N12 are: (1)SOA is power-dissipation limited; (2)nanosecond switching speeds; (3)linear transfer charaxteristics; (4)high input impedance; (5)majority carrier device;...

floor Price/Ceiling Price

Part Number:
RFM15N12
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Description

The features of RFM15N12 are: (1)SOA is power-dissipation limited; (2)nanosecond switching speeds; (3)linear transfer charaxteristics; (4)high input impedance; (5)majority carrier device; (6)high-current, low-inductance package.

The following is about the absolute maximum ratings of RFM15N12: (1)drain-source voltage: 120V; (2)drain-gate voltage, Rgs=1M: 120V; (3)gate-source voltage: ±20V; (4)drain current, RMS continuous: 15A; (5)power dissipation @ Tc=25: 100W, derate abrove Tc=25: 0.8W/; (6)operating and storage temperature: -55 to +150.

The electrical characteristics of the RFM15N12 are: (1)drain-source breakdown voltage: 120V min at ID=1mA, VGS=0; (2)gate thresholad voltage: 2V min and 4V max at VDS=VGS, ID=1mA; (3)zero gate voltage drain: 1A max at VDS=100V; (4)gate-source leakage current: 100nA max at VGS=±20V, VDS=0; (5)static drain-source on resistance: 0.15 max at ID=7.5A, VGS=10V; (6)input capacitance: 1700pF max at VDS=25V, VGS=0V, f=1MHz; (7)output capacitance: 750pF max at VDS=25V, VGS=0V, f=1MHz.




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