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RFD10P03SM, RFD10P05, RFD12N06RLE

Table of contents:
Info of RFD10P03SM
Info of RFD10P05
Info of RFD12N06RLE

RFD10P03SM, RFD10P05, RFD12N06RLE Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-251/252 D/C:05+

RFD10P03SM, RFD10P05, RFD12N06RLE Picture

RFD10P03SM, RFD10P05, RFD12N06RLE Datasheet download

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Part Number: RFD10P03SM

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-251/252

D/C: 05+

Description: MOSFET N-CHAN 60V 18A IPAK

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RFD12N06RLE Parameters

Technical/Catalog Information	RFD12N06RLE
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	63 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	485pF @ 25V
Power - Max	49W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFD12N06RLE RFD12N06RLE

RFD12N06RLE Maximum Ratings

	RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE	UNITS
Drain to Source Voltage (Note 1) V_DSS	60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	60	V
Continuous (Figure 2)ID	16	A
Pulsed Drain Current (Note 3)IDM	26	A
Gate to Source Voltage V_GS	-5 to10	V
Power DissipationPD	40	W
Linear Derating Factor	0.32	W/oC
Derate above 25oC	0.20	W/oC
Single Pulse Avalanche Energy RatingEAS	Refer to UIS SOA Curve
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFD12N06RLE Features

• 12A, 60V
• rDS(ON) = 0.135W
• Electrostatic Discharge Protected
• UIS Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"

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