RFD16N05LSM

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 16 A
Gate-Source Breakdown Voltage : +/- 10 V
Drain-Source Breakdown Voltage : 50 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.047 Ohms


Features:

• 16A, 50V
• rDS(ON) = 0.047W
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature




Specifications

	RFD16N05L, RFD16N05LSM	UNITS
Drain to Source Voltage (Note 1) VDSS	50	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	50	V
Continuous Drain Current ID	16	A
Pulsed Drain Current (Note 3) IDM	45	A
Gate to Source Voltage VGS	±20	V
EAS Power Dissipation PD 25oC	48	W
Derate above 25oC	0.48	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, TSTG	-55 to 75	o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	o C
Package Body for 10s, See Techbrief 334 . Tpkg	260	o C

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
RFD16N05LSM	Full Production	RoHS Compliant	$0.75	TO-252(DPAK)	2	RAIL	N/A	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: RFD16N Line 3: 05LSM
RFD16N05LSM9A	Full Production	RoHS Compliant	$0.81	TO-252(DPAK)	2	TAPE REEL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: RFD16N Line 3: 05LSM

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product RFD16N05LSM is available. Click here for more information .

Description

These are N-Channel logic level power MOSFETs RFD16N05LSM manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages

Parameters:

Technical/Catalog Information	RFD16N05LSM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	47 mOhm @ 16A, 5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFD16N05LSM RFD16N05LSM