RFD10P03L

Packaging :
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Package / Case : TO-220AB
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.2 Ohms


Features:

• 10A, 30V
• rDS(ON) = 0.200W
• Temperature Compensating PSPICE® Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature


Specifications

	RFD10P03L, RFD10P03LSM, RFP10P03L	UNITS
Drain to Source Voltage (Note 1) VDSS	-30	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	-30	V
Gate to Source Voltage VGS	±10	A
Drain Current
RMS Continuous ID	10	V
Pulsed Drain CurrentIDM	See Figure 5	W
Single Pulse Avalanche Rating EAS	Refer to UIS Curve
Derate above 25oC	38	W
Single Pulse Avalanche Energy RatingEAS	Refer to UIS Curve
Operating and Storage Temperature .TJ, TSTG	-55 to 75	o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	o C
Package Body for 10s, See Techbrief 334 Tpkg	260	o C

Description

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.