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RFD12N06RLE

MOSFET 60V/12a/0.135Ohm NCh Logic Level

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SeekIC No. : 00163654 Detail

RFD12N06RLE: MOSFET 60V/12a/0.135Ohm NCh Logic Level

RFD12N06RLE Data Sheet

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Part Number:
RFD12N06RLE
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.075 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 17 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.075 Ohms
Package / Case : TO-251


Features:

• 12A, 60V
• rDS(ON) = 0.135W
• Electrostatic Discharge Protected
• UIS Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"


Specifications
RFD12N06RLE,
RFD12N06RLESM,
RFP12N06RLE
UNITS
Drain to Source Voltage (Note 1) VDSS
60
V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR
60
V
Continuous (Figure 2)ID
16
A
Pulsed Drain Current (Note 3)IDM
26
A
Gate to Source Voltage VGS
-5 to10
V

Power DissipationPD

40
W
Linear Derating Factor
0.32
 W/oC
Derate above 25oC
0.20
W/oC
Single Pulse Avalanche Energy RatingEAS
Refer to UIS SOA Curve
Operating and Storage Temperature .TJ, TSTG
-55 to 75
o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL
300
o C
Package Body for 10s, See Techbrief 334 Tpkg
260
o C



Parameters:

Technical/Catalog InformationRFD12N06RLE
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs63 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 485pF @ 25V
Power - Max49W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RFD12N06RLE
RFD12N06RLE



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