MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
RFD10P03L, RFD10P03LSM, RFD10P03LSM9A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET P-CH 30V 10A TO-252AA
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PDF/DataSheet Download
Datasheet: RFD10P03L
File Size: 137207 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFD10P03LSM
File Size: 137207 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFD10P03LSM9A
File Size: 137207 KB
Manufacturer: HARRIS [Harris Corporation]
Download : Click here to Download
The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.
|
RFD10P03L, RFD10P03LSM, RFP10P03L |
UNITS | |
|
Drain to Source Voltage (Note 1) VDSS |
-30 |
V |
|
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR |
-30 |
V |
|
Gate to Source Voltage VGS |
±10 |
A |
|
Drain Current | ||
|
RMS Continuous ID |
10 |
V |
|
Pulsed Drain CurrentIDM |
See Figure 5 |
W |
|
Single Pulse Avalanche Rating EAS |
Refer to UIS Curve |
|
|
Derate above 25oC |
38 |
W |
|
Single Pulse Avalanche Energy RatingEAS |
Refer to UIS Curve |
|
|
Operating and Storage Temperature .TJ, TSTG |
-55 to 75 |
o C |
|
Maximum Temperature for Soldering | ||
|
Leads at 0.063in (1.6mm) from Case for 10s TL |
300 |
o C |
|
Package Body for 10s, See Techbrief 334 Tpkg |
260 |
o C |
| Technical/Catalog Information | RFD10P03LSM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 10A, 5V |
| Input Capacitance (Ciss) @ Vds | 1035pF @ 25V |
| Power - Max | 65W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | RFD10P03LSM RFD10P03LSM |
The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.
|
RFD10P03L, RFD10P03LSM, RFP10P03L |
UNITS | |
|
Drain to Source Voltage (Note 1) VDSS |
-30 |
V |
|
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR |
-30 |
V |
|
Gate to Source Voltage VGS |
±10 |
A |
|
Drain Current | ||
|
RMS Continuous ID |
10 |
V |
|
Pulsed Drain CurrentIDM |
See Figure 5 |
W |
|
Single Pulse Avalanche Rating EAS |
Refer to UIS Curve |
|
|
Derate above 25oC |
38 |
W |
|
Single Pulse Avalanche Energy RatingEAS |
Refer to UIS Curve |
|
|
Operating and Storage Temperature .TJ, TSTG |
-55 to 75 |
o C |
|
Maximum Temperature for Soldering | ||
|
Leads at 0.063in (1.6mm) from Case for 10s TL |
300 |
o C |
|
Package Body for 10s, See Techbrief 334 Tpkg |
260 |
o C |
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