Features: • 16A, 30V• rDS(ON) = 0.025W• Temperature Compensating PSPICE™ Model• Can be Driven Directly from CMOS, NMOS,and TTL Circuits• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating Temperature• Related Literature- TB334...
RFD16N03LSM: Features: • 16A, 30V• rDS(ON) = 0.025W• Temperature Compensating PSPICE™ Model• Can be Driven Directly from CMOS, NMOS,and TTL Circuits• Peak Current vs Pulse Wid...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
RFD16N03L, RFD16N03LSM | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 30 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 30 | V |
Continuous Drain Current ID | 16 | A |
Pulsed Drain Current (Note 3) IDM | 45 | A |
Gate to Source Voltage VGS | ±10 | V |
EAS Power Dissipation PD 25oC |
48 | W |
Pulsed Avalanche Rating EAS | Figures 6, 16, 17 | |
Derate above 25oC | 0.48 | A |
Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
Package Body for 10s, See Techbrief 334 . Tpkg | 260 | o C |