PTF080451, PTF080451E-A, PTF080601 Selling Leads, Datasheet
MFG:INFINEON D/C:08+
PTF080451, PTF080451E-A, PTF080601 Datasheet download
Part Number: PTF080451
MFG: INFINEON
Package Cooled:
D/C: 08+
PTF080451, PTF080451E-A, PTF080601
- Table of contents:
Info of PTF080451
Info of PTF080451E-A
Info of PTF080601
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About PTF080451
PDF/DataSheet Download
Datasheet: PTF080451
File Size: 162325 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About PTF080101
PDF/DataSheet Download
Datasheet: PTF080101
File Size: 65686 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About PTF080601
PDF/DataSheet Download
Datasheet: PTF080601
File Size: 300786 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PTF080451 General Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
PTF080451 Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
|
Drain-Source Voltage |
VDSS |
65 |
Vdc |
|
Gate-Source Voltage |
VGS |
0.5 to +12 |
Vdc |
|
Operating Junction Temperature |
TJ |
200 |
°C |
|
Total Device Dissipation Above 25°C derate by |
PD |
184 1.05 |
Watts W/°C |
|
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
|
Thermal Resistance (TCASE = 70°C, 45 W CW) |
RqJC |
0.95 |
°C/W |
PTF080451 Features
• Broadband internal matching
• Typical EDGE performance
- Average output power = 22.5 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P1dB = 60 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
• Typical EDGE performance
- Average output power = 22.5 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P1dB = 60 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
PTF080601 General Description
The PTF080601 is a 60W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
PTF080601 Maximum Ratings
| Parameter | Symbol | Value | Unit | |
| Drain-Source Voltage | VDSS | 65 | Vdc | |
| Gate-Source Voltage | VGS | 0.5 to +12 | Vdc | |
| Operating Junction Temperature | TJ | 200 | °C | |
|
Total Device Dissipation Above 25°C derate by |
PTF080601A | PD |
180 1.03 |
Watts W/°C |
|
Total Device Dissipation Above 25°C derate by |
PTF080601E | PD |
195 1.11 |
Watts W/°C |
| Storage Temperature Range | TSTG | 40 to +150 | °C | |
| Thermal Resistance (TCASE = 70°C, 130 W CW) |
PTF080601A PTF080601E |
RqJC RqJC |
0.972 0.897 |
°C/W °C/W |
PTF080601 Features
• Broadband internal matching
• Typical EDGE performance
- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P1dB = 90 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
• Typical EDGE performance
- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P1dB = 90 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
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