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PTF 10020

Features: • INTERNALLY MATCHED• Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• 100% Lot TraceabilitySpecifications ...

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PTF 10020: Features: • INTERNALLY MATCHED• Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ• Full Gold Metallization• Silico...

PTF 10020 Data Sheet

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Part Number:
PTF 10020
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• INTERNALLY MATCHED
• Performance at 960 MHz, 28 Volts
  - Output Power = 125 Watts
  - Power Gain = 12.5 dB Typ
  - Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% Lot Traceability


Specifications

Parameter Symbol Value Unit
Drain-Source Voltage (1) VDSS 65 Vdc
Gate-Source Voltage (1) VGS ±20 Vdc
Operating Junction Temperature TJ 200 °C

Total Device Dissipation

Above 25°C derate by

PD

290

1.67

Watts

W/°C

Storage Temperature Range TSTG 40 to +150 °C
Thermal Resistance (TCASE = 70°C) RqJC 0.6 °C/W



Description

The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.




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