Features: • Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ, 12.0 dB Min - Efficiency = 55% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• Back Side Common Source• 100% lot traceabilit...
PTF 10015: Features: • Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ, 12.0 dB Min - Efficiency = 55% Typ• Full Gold Metallization• Silicon Nitride Pass...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (1) |
VDSS |
65 |
Vdc |
Gate-Source Voltage (1) |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
175 1.0 |
Watts W/°C |
Storage Temperature Range |
TSTG |
65 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
1.0 |
°C/W |
The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. PTF 10015 operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability.