Features: • INTERNALLY MATCHED• Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications ...
PTF 10019: Features: • INTERNALLY MATCHED• Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon...
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Features: • Performance at 960 MHz, 26 Volts - Output Power = 18 Watts Min - Power Gain = 15...
Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
215 1.25 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
0.8 |
°C/W |
The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.