Features: • INTERNALLY MATCHED• Performance at 1.5 GHz, 28 Volts - Output Power = 30 Watts Min - Power Gain = 13 dB Typ - Efficiency = 48% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications ...
PTF 10021: Features: • INTERNALLY MATCHED• Performance at 1.5 GHz, 28 Volts - Output Power = 30 Watts Min - Power Gain = 13 dB Typ - Efficiency = 48% Typ• Full Gold Metallization• Silic...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (1) |
VDSS |
65 |
Vdc |
Gate-Source Voltage (1) |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
105 0.6 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
1.65 |
°C/W |
The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. PTF 10021 is rated at 30 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.