Features: • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• 100% lot traceabilitySpecifications Parameter Symbol ...
PTF 10009: Features: • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated•...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
270 1.54 |
Watts W/°C |
Storage Temperature Range |
TSTG |
-65 to 150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
0.65 |
°C/W |
The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. PTF 10009 operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability.