PMWD15UN, PMWD16UN, PMWD18UN Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:04+ D/C:MSOP8
PMWD15UN, PMWD16UN, PMWD18UN Datasheet download
Part Number: PMWD15UN
MFG: PHILIPS
Package Cooled: 04+
D/C: MSOP8
PMWD15UN, PMWD16UN, PMWD18UN
- Table of contents:
Info of PMWD15UN
Info of PMWD16UN
Info of PMWD18UN
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About PMWD15UN
PDF/DataSheet Download
Datasheet: PMWD15UN
File Size: 91045 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PMWD16UN
PDF/DataSheet Download
Datasheet: PMWD16UN
File Size: 96529 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PMWD18UN
PDF/DataSheet Download
Datasheet: PMWD18UN
File Size: 94821 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PMWD15UN General Description
Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
PMWD15UN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 20 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | 20 | V |
| VGS | gate-source voltage (DC) | - | ±12 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 |
- | 11.6 | A |
| Tsp = 100 °C; VGS = 4.5 V; Figure 2 |
- | 7.3 | A | ||
| IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | 46.4 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 4.2 | W |
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | junction temperature | -55 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 3.5 | A |
| ISM | peak source (diode forward) current | Tsp = 25 °C;pulsed; tp 10s | - | 14 | A |
PMWD15UN Features
Surface mounting package
Low profile
Very low threshold voltage
Fast switching
Low profile
Very low threshold voltage
Fast switching
PMWD15UN Typical Application
Portable appliances
PCMCIA cards
Battery management
Load switching
PCMCIA cards
Battery management
Load switching
PMWD15UN Connection Diagram
PMWD16UN General Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
PMWD16UN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 20 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | 20 | V |
| VGS | gate-source voltage (DC) | - | ±10 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 |
- | 9.9 | A |
| Tsp = 100 °C; VGS = 4.5 V; Figure 2 |
- | 5.9 | A | ||
| IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | 39.5 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 3.1 | W |
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | junction temperature | -55 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 2.6 | A |
| ISM | peak source (diode forward) current | Tsp = 25 °C;pulsed; tp 10s | - | 10 | A |
PMWD16UN Features
Surface mounting package
Low profile
Very low threshold voltage
Fast switching
Low profile
Very low threshold voltage
Fast switching
PMWD16UN Typical Application
Portable appliances
PCMCIA cards
Battery management
Load switching
PCMCIA cards
Battery management
Load switching
PMWD16UN Connection Diagram
PMWD18UN General Description
Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology
PMWD18UN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 30 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | 30 | V |
| VGS | gate-source voltage (DC) | - | ±12 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 |
- | 7.8 | A |
| Tsp = 100 °C; VGS = 4.5 V; Figure 2 |
- | 5 | A | ||
| IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | 32 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 2.3 | W |
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | junction temperature | -55 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 1.9 | A |
| ISM | peak source (diode forward) current | Tsp = 25 °C;pulsed; tp 10s | - | 7.6 | A |
PMWD18UN Features
Surface mounted package
Low profile
Very low threshold
Fast switching
Low profile
Very low threshold
Fast switching
PMWD18UN Typical Application
Portable appliances
PCMCIA cards
Battery management
Load switching.
PCMCIA cards
Battery management
Load switching.
PMWD18UN Connection Diagram
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