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PMWD15UN

Features: Surface mounting packageLow profileVery low threshold voltage Fast switchingApplicationPortable appliances PCMCIA cardsBattery managementLoad switchingPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C ...

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SeekIC No. : 004464254 Detail

PMWD15UN: Features: Surface mounting packageLow profileVery low threshold voltage Fast switchingApplicationPortable appliances PCMCIA cardsBattery managementLoad switchingPinoutSpecifications Symbol ...

PMWD15UN Data Sheet

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Part Number:
PMWD15UN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/31

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Product Details

Description



Features:

Surface mounting package
Low profile
Very low threshold voltage
Fast switching


Application

Portable appliances
PCMCIA cards
Battery management 
Load switching


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 20 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 20 V
VGS gate-source voltage (DC)   - ±12 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3		 - 11.6 A
Tsp = 100 °C; VGS = 4.5 V;
Figure 2		 - 7.3 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 46.4 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 4.2 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 3.5 A
ISM peak source (diode forward) current Tsp = 25 °C;pulsed; tp 10s - 14 A



Description

PMWD15UN Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.


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