PMWD16UN,518

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Manufacturer: NXP Semiconductors
Series: TrenchMOS™
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) @ Vgs: 23.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1366pF @ 16V
Current - Continuous Drain (Id) @ 25° C: 9.9A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 3.5A, 4.5V


Parameters:

Technical/Catalog Information	PMWD16UN,518
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	9.9A
Rds On (Max) @ Id, Vgs	19 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1366pF @ 16V
Power - Max	3.1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	23.6nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Drawing Number	568; SOT530; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PMWD16UN,518 PMWD16UN,518 568 2360 1 ND 56823601ND 568-2360-1