Position: Home  > All Categories> Integrated Circuits (ICs) > PMWD18UN

PMWD18UN

Features: Surface mounted package Low profileVery low threshold Fast switchingApplicationPortable appliancesPCMCIA cardsBattery managementLoad switching.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C - 30 ...

product image

PMWD18UN Picture
See larger image
SeekIC No. : 004464256 Detail

PMWD18UN: Features: Surface mounted package Low profileVery low threshold Fast switchingApplicationPortable appliancesPCMCIA cardsBattery managementLoad switching.PinoutSpecifications Symbol Paramet...

PMWD18UN Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PMWD18UN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Surface mounted package
Low profile
Very low threshold
Fast switching


Application

Portable appliances 
PCMCIA cards
Battery management
Load switching.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 30 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 30 V
VGS gate-source voltage (DC)   - ±12 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3		 - 7.8 A
Tsp = 100 °C; VGS = 4.5 V;
Figure 2		 - 5 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 32 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 2.3 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 1.9 A
ISM peak source (diode forward) current Tsp = 25 °C;pulsed; tp 10s - 7.6 A



Description

PMWD18UN Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
View more