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PMWD18UN

Features: Surface mounted package Low profileVery low threshold Fast switchingApplicationPortable appliancesPCMCIA cardsBattery managementLoad switching.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C - 30 ...

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SeekIC No. : 004464256 Detail

PMWD18UN: Features: Surface mounted package Low profileVery low threshold Fast switchingApplicationPortable appliancesPCMCIA cardsBattery managementLoad switching.PinoutSpecifications Symbol Paramet...

PMWD18UN Data Sheet

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Part Number:
PMWD18UN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/26

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Product Details

Description



Features:

Surface mounted package
Low profile
Very low threshold
Fast switching


Application

Portable appliances 
PCMCIA cards
Battery management
Load switching.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 30 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 30 V
VGS gate-source voltage (DC)   - ±12 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3		 - 7.8 A
Tsp = 100 °C; VGS = 4.5 V;
Figure 2		 - 5 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 32 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 2.3 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 1.9 A
ISM peak source (diode forward) current Tsp = 25 °C;pulsed; tp 10s - 7.6 A



Description

PMWD18UN Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology


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