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PMWD19UN

Features: · Surface mounting package· Low profile· Very low threshold · Fast switchingApplication· Portable appliances· PCMCIA cards· Battery management · Load switchingSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 150 30 V V...

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SeekIC No. : 004464257 Detail

PMWD19UN: Features: · Surface mounting package· Low profile· Very low threshold · Fast switchingApplication· Portable appliances· PCMCIA cards· Battery management · Load switchingSpecifications Symbol P...

PMWD19UN Data Sheet

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Part Number:
PMWD19UN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/26

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Product Details

Description



Features:

· Surface mounting package
· Low profile
· Very low threshold
· Fast switching


Application

· Portable appliances
· PCMCIA cards
· Battery management
· Load switching


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150   30 V
VDGR drain-gate voltage 25 Tj 150 ; RGS = 20 kW   30 V
VGS gate-source voltage     ±10 V
ID drain current (DC) Tsp = 25 ; VGS = 4.5 V; Figure 2 and 3   5.6 A
Tsp = 100 ; VGS = 4.5 V; Figure 2   3.4 A
IDM peak drain current Tsp = 25 ; pulsed; tp 10 ms; Figure 3   20 A
Ptot total power dissipation Tsp = 25 ; Figure 1   2.3 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25   2 A
ISM peak source (diode forward) current Tsp = 25 ; pulsed; tp 10 ms   7 A



Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMWD19UN in SOT530-1 (TSSOP8).


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