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PMWD20XN

Features: Surface-mounted package Low profileExtremely low threshold voltage Fast switchingApplicationPortable appliances Battery managementPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C - 20 V VDGR ...

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SeekIC No. : 004464258 Detail

PMWD20XN: Features: Surface-mounted package Low profileExtremely low threshold voltage Fast switchingApplicationPortable appliances Battery managementPinoutSpecifications Symbol Parameter Conditi...

PMWD20XN Data Sheet

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Part Number:
PMWD20XN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/26

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Product Details

Description



Features:

Surface-mounted package
Low profile
Extremely low threshold voltage
Fast switching


Application

Portable appliances
Battery management


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 20 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 20 V
VGS gate-source voltage (DC)   - ±12 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3		 - 10.4 A
Tsp = 100 °C; VGS = 4.5 V;
Figure 2		 - 6.5 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 41.7 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 4.2 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 3.5 A
ISM peak source (diode forward) current Tsp = 25 °C;pulsed; tp 10s - 14 A



Description

PMWD20XN Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.


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