PHT6N06T 135, PHT6N06T/T3, PHT6N10T Selling Leads, Datasheet
MFG:NXP D/C:09+
PHT6N06T 135, PHT6N06T/T3, PHT6N10T Datasheet download
Part Number: PHT6N06T 135
MFG: NXP
Package Cooled:
D/C: 09+
MFG:NXP D/C:09+
PHT6N06T 135, PHT6N06T/T3, PHT6N10T Datasheet download
MFG: NXP
Package Cooled:
D/C: 09+
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PDF/DataSheet Download
Datasheet: PHT11N06
File Size: 77156 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHT6N06T/T3
File Size: 73006 KB
Manufacturer: Philips Semiconductors
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PDF/DataSheet Download
Datasheet: PHT6N10T
File Size: 182383 KB
Manufacturer:
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N-channel enchancement mode field-effect power transistor in a plastic envelope using"trench" technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.It has six unique features: the first one is "Trench" technology. The second one is low on-state resistance. The third one is fast switching. The forth one is stable off-state charactersitics. The fifth one is high thermal cycling performance. The sixth one is low thermal resistance.
There are some limiting values(limiting values in accordance with the absolute maximum system).Drain-source voltage(VDSS) is 100 V max when Tj is 25 to 175.Drain-gate voltage(VDGR) is 100 V when Tj is 25 to 175,RGS is 20 k. Gate-source voltage is ±20 V. Continuous drian current(DC)(ID) is 6 A when Tsp is 25 or is 3.8 A when Tsp is 100.Drain current(pulse peak value)(IDM) is 24 A when Tsp is 25.Total power dissipation(Ptot) is 8.3 W when Tsp is 25. Junction temperature(Tj) is 150.Otherwise, there are also some thermal resistances about it.Thermal resistance junction to solder point is 12 k/W typ and 15 k/W max. Thermal resistance junction to ambient is 70 K/W typ (pcb mounted;minimum footprint).Electrical characteristics: Drain-source breakdwon voltage(V(BR)DSS ) is 100 V min when VGS is 0V, ID is 0.25 mA. Gate threshold voltage (VGS(TO) ) is 2.0 Vmin,3.0 V typ and 4.0 V max when VDS is VGS, ID is 1 mA. Drain-source leakage current(IDSS) is 1uA typ and 25 uA max when VDS is 100 V , VGS is 0 V.Gate-source leakage current(IGSS) is 10 nA typ and 100 nA max when VGS is ±10 V,VDS is 0 V.Drain-source on-state resistance(RDS(ON) ) is 90 mtyp and 100 m max when VGS is 10 V ,Tj is 150, ID is 3 A. Total gate charge is 20 nC typ and 26 nC max when VDD is 80 V , VGS is 10 V,ID is 6 A .Gate to source charge is 3 nC typ and 5 nC max when VDD is 80 V , VGS is 10 V,ID is 6 A .
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