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PEMH4, PEMX1, PEMZ1

Table of contents:
Info of PEMH4
Info of PEMX1
Info of PEMZ1

PEMH4, PEMX1, PEMZ1 Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:SOT153 D/C:SOT-363

PEMH4, PEMX1, PEMZ1 Datasheet download

Five Points

Part Number: PEMH4

MFG: PHILIPS

Package Cooled: SOT153

D/C: SOT-363

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PEMH4 General Description

NPN resistor-equipped double transistor in a SOT666 plastic package.

PEMH4 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per transistor
V_CBO	collector-base voltage	open emitter	-	50	V
V_CEO	collector-emitter voltage	open base	-	50	V
V_EBO	emitter-base voltage	open collector	-	5	V
I_C	collector current (DC)		-	100	mA
I_CM	peak collector current		-	100	mA
P_tot	total power dissipation	Tamb 25 °C; note 1	-	200	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	operating ambient temperature		-65	+150	°C
Per device
P_tot	total power dissipation	Tamb 25 °C; note 1	-	300	mW

Note
1. Transistor mounted on an FR4 printed-circuit board.

PEMH4 Features

· 300 mW total power dissipation
· Very small 1.6 mm×1.2 mm ×0.55 mm ultra thin package
· Excellent coplanarity due to straight leads
· Reduces number of components as replacement of two SC-75/SC-89 packaged transistors
· Reduces required board space
· Reduces pick and place costs.

PEMH4 Typical Application

· General purpose switching and amplification
· Inverter and interface circuits
· Circuit driver.

PEMH4 Connection Diagram

PEMX1 General Description

NPN double transistor pair in a SOT666 plastic package. PNP complement: PEMT1.

PEMX1 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per transistor
V_CBO	collector-base voltage	open emitter	-	50	V
V_CEO	collector-emitter voltage	open base	-	40	V
V_EBO	emitter-base voltage	open collector	-	5	V
I_C	collector current (DC)		-	100	mA
I_CM	peak collector current		-	200	mA
I_BM	peak base current		-	200	mA
P_tot	total power dissipation	Tamb 25 °C; note 1	-	200	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	operating ambient temperature		-65	+150	°C
Per device
P_tot	total power dissipation	Tamb 25 °C; note 1	-	300	mW

Note
1. Transistor mounted on an FR4 printed-circuit board.

PEMX1 Features

· 300 mW total power dissipation
· Very small 1.6 mm x 1.2 mm ultra thin package
· Excellent coplanarity due to straight leads
· Replaces two SC-75/SC-89 packaged transistors on same PCB area
· Reduced required PCB area
· Reduced pick and place costs.

PEMX1 Typical Application

· General purpose switching and amplification.

PEMX1 Connection Diagram

PEMZ1 General Description

NPN/PNP transistor pair in a SOT666 plastic package.

PEMZ1 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per transistor; for the PNP transistor with negative polarity
V_CBO	collector-base voltage	open emitter	-	50	V
V_CEO	collector-emitter voltage	open base	-	40	V
V_EBO	emitter-base voltage	open collector	-	3	V
I_C	collector current (DC)		-	100	mA
I_CM	peak collector current		-	200	mA
I_BM	peak base current		-	200	mA
P_tot	total power dissipation	Tamb 25 °C; note 1	-	200	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	operating ambient temperature		-65	+150	°C
Per device
P_tot	total power dissipation	Tamb25 °C; note 1	-	300	mW

Note
1. Transistor mounted on an FR4 printed-circuit board.

PEMZ1 Features

· 300 mW total power dissipation
· Very small 1.6×1.2 mm ultra thin package
· Self alignment during soldering due to straight leads
· Replaces two SC-75/SC-89 packaged transistors on same PCB area
· Reduced required PCB area
· Reduced pick and place costs.

PEMZ1 Typical Application

· General purpose switching and amplification
· Complementary MOSFET driver for switch mode power supply
· Complementary driver for audio amplifiers.

PEMZ1 Connection Diagram

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