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PEMB10

Features: · 300 mW total power dissipation· Very small 1.6 mm× 1.2 mm ×0.55 mm ultra thin package· Excellent coplanarity due to straight leads· Reduces number of components as replacement of two SC-75/SC-89 packaged transistors· Reduces required board space· Reduces pick and place costs.Applicatio...

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SeekIC No. : 004459511 Detail

PEMB10: Features: · 300 mW total power dissipation· Very small 1.6 mm× 1.2 mm ×0.55 mm ultra thin package· Excellent coplanarity due to straight leads· Reduces number of components as replacement of two SC-...

PEMB10 Data Sheet

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Part Number:
PEMB10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

· 300 mW total power dissipation
· Very small 1.6 mm × 1.2 mm ×0.55 mm ultra thin package
· Excellent coplanarity due to straight leads
· Reduces number of components as replacement of two SC-75/SC-89 packaged transistors
· Reduces required board space
· Reduces pick and place costs.


Application

· General purpose switching and amplification
· Inverter and interface circuits
· Circuit driver.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage
open emitter
-
-50
V
VCEO collector-emitter voltage
open base
-
-40
V
VEBO emitter-base voltage
open collector
-
-5
V
VI input voltage
positive
negative		  
-
-
+12
-5
V
V
IO collector current (DC)
-
-100
mA
ICM peak collector current
-
-200
mA
IBM peak base current
-
-200
mA
Ptot total power dissipation
Tamb 25 °C;
note 1
-
200
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
150
°C
Tamb operating ambient temperature
-65
+150
°C
Per device
Ptot total power dissipation
Tamb25 °C;
note 1
-
300
mW
Note
1. Transistor mounted on an FR4 printed-circuit board.


Description

PNP resistor-equipped double transistor PEMB10 in a SOT666 plastic package.


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