PEMB2, PEMB3, PEMB4 Selling Leads, Datasheet
MFG:24000 Package Cooled:ph D/C:dc01
MFG:24000 Package Cooled:ph D/C:dc01
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PDF/DataSheet Download
Datasheet: PEMB2
File Size: 54562 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PEMB3
File Size: 45876 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PEMB4
File Size: 45646 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-40 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-5 |
V |
VI | input voltage positive negative |
- - |
+10 -40 |
V V | |
IO | collector current (DC) |
- |
-100 |
mA | |
ICM | peak collector current |
- |
-200 |
mA | |
IBM | peak base current |
- |
-200 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C; note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C; note 1 |
- |
300 |
mW |
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-50 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-10 |
V |
Vi | input voltage positive negative |
- - |
+10 -40 |
V V | |
IC | collector current (DC) |
- |
-100 |
mA | |
ICM | peak base current |
- |
100 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C;note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C;note 1 |
- |
300 |
mW |
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-50 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-5 |
V |
IC | collector current (DC) |
- |
-100 |
mA | |
ICM | peak base current |
- |
-100 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C;note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C;note 1 |
- |
300 |
mW |