PEMB10, PEMB11, PEMB13 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT-666 D/C:02+
![PEMB10, PEMB11, PEMB13 Picture](/images/ic.gif)
PEMB10, PEMB11, PEMB13 Datasheet download
Part Number: PEMB10
MFG: PHILIPS
Package Cooled: SOT-666
D/C: 02+
MFG:PHILIPS Package Cooled:SOT-666 D/C:02+
PEMB10, PEMB11, PEMB13 Datasheet download
MFG: PHILIPS
Package Cooled: SOT-666
D/C: 02+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: PEMB10
File Size: 46704 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PEMB11
File Size: 46699 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PEMB13
File Size: 61969 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-40 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-5 |
V |
VI | input voltage positive negative |
- - |
+12 -5 |
V V | |
IO | collector current (DC) |
- |
-100 |
mA | |
ICM | peak collector current |
- |
-200 |
mA | |
IBM | peak base current |
- |
-200 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C; note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C; note 1 |
- |
300 |
mW |
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-50 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-10 |
V |
Vi | input voltage positive negative |
- - |
+10 -40 |
V V | |
IC | collector current (DC) |
- |
-100 |
mA | |
ICM | peak base current |
- |
100 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C;note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C;note 1 |
- |
300 |
mW |
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-50 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-5 |
V |
Vi | input voltage positive negative |
- - |
+5 30 |
V V | |
IC | collector current (DC) |
- |
-100 |
mA | |
ICM | peak base current |
- |
100 |
mA | |
Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C; note 1 notes 1 and 2 |
- - |
200 200 |
mW MW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation SOT363 SOT666 |
Tamb25 °C; note 1 notes 1 and 2 |
- - |
300 300 |
mW MW |