PEMB10, PEMB11, PEMB13 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT-666 D/C:02+
PEMB10, PEMB11, PEMB13 Datasheet download
Part Number: PEMB10
MFG: PHILIPS
Package Cooled: SOT-666
D/C: 02+
MFG:PHILIPS Package Cooled:SOT-666 D/C:02+
PEMB10, PEMB11, PEMB13 Datasheet download
MFG: PHILIPS
Package Cooled: SOT-666
D/C: 02+
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PDF/DataSheet Download
Datasheet: PEMB10
File Size: 46704 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PEMB11
File Size: 46699 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PEMB13
File Size: 61969 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-40 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-5 |
V |
VI | input voltage positive negative |
- - |
+12 -5 |
V V | |
IO | collector current (DC) |
- |
-100 |
mA | |
ICM | peak collector current |
- |
-200 |
mA | |
IBM | peak base current |
- |
-200 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C; note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C; note 1 |
- |
300 |
mW |
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-50 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-10 |
V |
Vi | input voltage positive negative |
- - |
+10 -40 |
V V | |
IC | collector current (DC) |
- |
-100 |
mA | |
ICM | peak base current |
- |
100 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C;note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C;note 1 |
- |
300 |
mW |
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-50 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-5 |
V |
Vi | input voltage positive negative |
- - |
+5 30 |
V V | |
IC | collector current (DC) |
- |
-100 |
mA | |
ICM | peak base current |
- |
100 |
mA | |
Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C; note 1 notes 1 and 2 |
- - |
200 200 |
mW MW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation SOT363 SOT666 |
Tamb25 °C; note 1 notes 1 and 2 |
- - |
300 300 |
mW MW |