Features: · 300 mW total power dissipation· Very small 1.6 mm ×1.2 mm ´ 0.55 mm ultra thin package· Excellent coplanarity due to straight leads· Reduces number of components as replacement of two SC-75/SC-89 packaged transistors· Reduces required board space· Reduces pick and place costs.App...
PEMB3: Features: · 300 mW total power dissipation· Very small 1.6 mm ×1.2 mm ´ 0.55 mm ultra thin package· Excellent coplanarity due to straight leads· Reduces number of components as replacement of ...
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SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-50 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-10 |
V |
Vi | input voltage positive negative |
- - |
+10 -40 |
V V | |
IC | collector current (DC) |
- |
-100 |
mA | |
ICM | peak base current |
- |
100 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C;note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C;note 1 |
- |
300 |
mW |