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NTP4302, NTP45N06, NTP45N06G

NTP4302, NTP45N06, NTP45N06G Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-220AB  D/C:245

NTP4302 Picture

NTP4302, NTP45N06, NTP45N06G Datasheet download

Five Points

Part Number: NTP4302

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-220AB

D/C: 245

Description: MOSFET N-CH 60V 45A TO220AB

 

 
 
 
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About NTP4302

PDF/DataSheet Download

Datasheet: NTP4302

File Size: 73457 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NTP45N06

PDF/DataSheet Download

Datasheet: NTP45N06

File Size: 65693 KB

Manufacturer: ONSEMI [ON Semiconductor]

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  • NTP125N02RG

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  • NTP2955G

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About NTP10N40

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Datasheet: NTP10N40

File Size: 45990 KB

Manufacturer: ON SEMICONDUCTOR

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NTP4302 Parameters

Technical/Catalog InformationNTP4302
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C74A
Rds On (Max) @ Id, Vgs9.3 mOhm @ 37A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 24V
Power - Max80W
PackagingTube
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTP4302
NTP4302
NTP4302OS ND
NTP4302OSND
NTP4302OS

NTP4302 Maximum Ratings

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Drain−to−Gate Voltage (RGS = 10 M)
VDGR
30
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Drain Current
− Continuous @ TC = 25
− Continuous @ TC = 100
− Single Pulse (tp10 s)

ID
ID
IDM

74
47
175
Adc

Apk
Total Power Dissipation @ TC = 25
Derate above 25
PD
80
0.66
W
W/
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 30 Vdc, VGS = 10 Vdc, L = 5.0 mH
IL(pk) = 17 A, VDS = 30 Vdc, RG = 25 )
EAS
722
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)

RJC
RJA
1.55
70
/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL
260
1. When surface mounted to an FR4 Board using minimum recommended Pad Size, (Cu Area 0.412 in2).
2. Current limited by internal lead wires.

NTP4302 Features

• Low RDS(on)
• Higher Efficiency Extending Battery Life
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS Specified at Elevated Temperature

NTP4302 Typical Application

• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery Powered Products: Ie:
   Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards

NTP4302 Connection Diagram

NTP45N06 Parameters

Technical/Catalog InformationNTP45N06
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C45A
Rds On (Max) @ Id, Vgs26 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds 1725pF @ 25V
Power - Max2.4W
PackagingTube
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTP45N06
NTP45N06
NTP45N06OS ND
NTP45N06OSND
NTP45N06OS

NTP45N06 General Description

Designed for low voltage, high speed switching applications power supplies, converters and power motor controls and bridge circuits.

NTP45N06 Maximum Ratings

Rating Symbol Value Unit
DraintoSource Voltage VDSS 60 Vdc
DraintoGate Voltage (RGS = 10 M) VDGR 60 Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp*10 s)
VGS
VGS
±20
±30
Vdc
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tp 10 ms)
ID
ID
IDM
45
30
150
Adc
Apk
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)
PD 125
0.83
3.2
2.4
W
W/°C
W
W
Operating and Storage Temperature Range TJ, Tstg -55 to
+175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25
IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)
EAS 240 mJ

NTP45N06 Features

• Higher Current Rating
• Lower RDS(on)
• Lower VDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge

NTP45N06 Typical Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits

NTP45N06G Parameters

Technical/Catalog InformationNTP45N06G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C45A
Rds On (Max) @ Id, Vgs26 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds 1725pF @ 25V
Power - Max2.4W
PackagingTube
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTP45N06G
NTP45N06G
NTP45N06GOS ND
NTP45N06GOSND
NTP45N06GOS

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