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NTP52N10

MOSFET 100V 60A N-Channel

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SeekIC No. : 00165213 Detail

NTP52N10: MOSFET 100V 60A N-Channel

NTP52N10 Data Sheet

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Part Number:
NTP52N10
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 30 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 30 mOhms
Continuous Drain Current : 52 A


Features:

• Source−to−Drain Diode Recovery Time comparable to a Discrete
  Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and RDS(on) Specified at Elevated Temperature


Application

• PWM Motor Controls
• Power Supplies
• Converters


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 100 Vdc
Drain−to−Gate Voltage (RGS = 1.0 m) VDGR 100 Vdc
Gate−to−Source Voltage − Continuous
− Non−Repetitive (tp10 ms)		 VGS ±20
±40		 Vdc
Drain− Continuous @ TA 25°C
− Continuous @ TA 100°C
− Pulsed (Note 1.)		 ID
ID
IDM		 52
40
156		 Adc
Total Power Dissipation @ TA 25°C
Derate above 25°C		 PD 178
1.43		 Watte
W/°C
Operating and Storage Temperature Range TJ and Tstg −55 to
+150		 °C
Single Drain−to−Source Avalanche Energy
− Starting TJ = 25°C
(VDD = 50 V, VGS = 10 Vdc,
IL(pk) = 40 A, L = 1.0 mH, RG = 25 W)		 EAS 800 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient		 RJC
RJA
 0.7
62.5		 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds		 TL 260 °C

1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.




Parameters:

Technical/Catalog InformationNTP52N10
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs30 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds 3150pF @ 25V
Power - Max214W
PackagingTube
Gate Charge (Qg) @ Vgs135nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTP52N10
NTP52N10
NTP52N10OS ND
NTP52N10OSND
NTP52N10OS



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