MOSFET 60V, 4.5mOhms N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 120 A | ||
Resistance Drain-Source RDS (on) : | 6 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Rail |
Technical/Catalog Information | NTP5426NG |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 60A, 10V |
Input Capacitance (Ciss) @ Vds | 5800pF @ 25V |
Power - Max | 215W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 170nC @ 10V |
Package / Case | TO-220AB |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTP5426NG NTP5426NG |